Peregrine Semi introduces world’s first Flip-Chip SP4T GSM Antenna Switch

PE4261 UltraCMOS™ Switch integrates control logic decoder and driver

San Diego, California, October 4, 2004 Peregrine Semiconductor Corporation, a leading supplier of high-performance RF CMOS and mixed-signal communications ICs, today announced the availability of the PE4261 RF antenna switch – the world’s first Flip-Chip SP4T Switch for dual-band GSM handset applications. This new landmark device provides Antenna Switch Module (ASM) manufacturers the lowest total height and smallest footprint solution by implementing flip-chip packaging.  The use of advanced packaging technology reduces the PCB area by a factor of nine when compared to conventional wire bonding.

The 50-Ohm PE4261 complements the PE4263 RF switch also announced today with many unprecedented features, including: two-pin CMOS logic control inputs; low TX insertion loss of 0.55 dB at 900 MHz and 0.65 dB at 1.9 GHz; high Isolation of 45 dB at 900 MHz and 40 dB at 1.9 GHz; low harmonics (2fo = -85 dBc and 3fo = -72 dBc at 35 dBm input power); 1500 V HBM ESD tolerance at all ports; an integrated CMOS decoder/driver and RX SAW over voltage protection circuit.  The device offers linear operation from 100 – 3000 MHz at 2.6 V with fast switch settling time. Further, the blocking capacitors typically found on pHEMT switches with positive control logic are not required for any UltraCMOS-based device.

Like the PE4263, this high-power device, developed on Peregrine’s UltraCMOS™ technology, advances the industry past traditional milestones and enables new roadmaps to be drawn for next generation ASM designs.  For the first time ever, CMOS has been directly connected to the antenna of a GSM handset. UltraCMOS-based products provide superior performance, lower insertion loss and higher integration alternatives to pin-diodes or pHEMT switch/CMOS designs.

The PE4261 is slated for high-volume production in multiple facilities, including those of Peregrine’s strategic partner, OKI Electric Industry Co., Ltd. (Tokyo, Japan). The device is priced at $0.52 ea. (10K units), and is available from Peregrine and its global distribution partner, Richardson Electronics.

Peregrine is known for its high-performance RF CMOS IC products which are ideally suited for a wide range of market segments, including Wireless Infrastructure and Mobile Wireless; Global Positioning (GPS); Optical; Broadband and Military/Space applications.  The Company’s innovative CMOS process UltraCMOS™ combines the RF, mixed-signal, and digital capabilities of any other CMOS process, yet tolerates incredibly high voltages required for high-performance wireless applications.

About UltraCMOS™ Technology

UltraCMOS™ mixed signal process technology is a proprietary, patented variation of silicon-on- insulator (SOI) technology. It is the first commercially qualified use of Ultra-Thin-Silicon (UTSi®) on sapphire substrates with high yields and competitive costs.  Significant performance advantages exist over competing processes such as GaAs, SiGe, BiCMOS and bulk silicon CMOS in applications where RF performance, low power and integration are paramount.

About Peregrine Semiconductor

Peregrine Semiconductor Corporation designs, manufactures, and markets high-performance communications ICs for the wireless, broadband cable communications, satellite and defense markets.  The Company, which recently moved its headquarters to a larger San Diego, California facility, maintains established design centers and operations in Chicago, IL; Aix-en-Provence, France; Sydney, Australia; and Tokyo, Japan. Additional information is available on the web at psemi.bonfirela.com. Contact Peregrine’s worldwide distribution partner, Richardson Electronics (NASDAQ: RELL), for sales information at 1-800-737-6937.

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The Peregrine Semiconductor name, logo and UTSi are registered trademarks and Ultra CMOS is a trademark of Peregrine Semiconductor Corporation. All other trademarks are the property of their respective owners.

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  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability
  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability
  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability
  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability
  • 75Ω Wired Broadband RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • Glitchless RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • General-purpose RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability
  • 2.4 GHz IoT FEMs

    Industry-leading monolithic Wi-Fi RF front-end solutions
    High linearity performance for Wi-Fi 6 and W-Fi 6E
    Compact form factors integrating high-performance RF, analog and digital
    Best-in-class ESD and reliability
  • Phase Shifters

    Ideal solutions for optimizing transmission phase angle
    Low root-mean-square (RMS) phase and amplitude error with fine phase resolution
    Digital control interface with parallel and serial programming options
    Best-in-class ESD and reliability
  • Monolithic Phase & Amplitude Controllers (MPACs)

    Reliable phase and amplitude control for next-generation communications
    Monolithic CMOS solution that integrates RF, analog and digital
    Integrated solution for Doherty power amplifier optimization (MPAC–Doherty)
  • Digital Tunable Capacitors (DTCs)

    Small form factor with high Q
    Monolithically integrated impedance tuning solution
    Wide-band tuning coverage, minimum mismatch losses, high linearity and fast switching speed
    Best-in-class ESD and reliability
  • Power Limiters

    Highly integrated solutions, smaller and more reliable than PIN-diode solutions
    Adjustable threshold control for maximum design flexibility
    High power handling and linearity required for wide-dynamic-range designs
    Fast response and recovery times for instantaneous protection and rapid return
  • Prescalers

    Exceptional performance with high-frequency support up to 13.5 GHz
    Low phase noise performance and low power consumption solutions
    Bare-die solutions for a wide variety of compact high-performance applications
    Best-in-class ESD and reliability
  • Mixers

    Broadband quad MOSFET array cores for high performance
    Industry-leading linearity, isolation and low conversion loss
    Available in MSOP, DFN and QFN packages
    Best-in-class ESD and reliability
  • Switch LNA

    Integrates dual-channel LNA with bypass function & high-power switch
    20W average RF input power
    Low noise figure of 0.9 dB
    +105°C operating temperature

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