High-speed FET Driver

High-speed FET Driver

PE29100

OBSOLETE (OBS)
This product is obsolete. For more information, please contact your local sales representative.

The PE29100 integrated high-speed driver is designed to control the gates of external power devices, such as enhancement mode gallium nitride (eGaN®) FETs. The outputs of the PE29100 are capable of providing switching transition speeds in the sub-nanosecond range for hard switching applications up to 33 MHz. High switching speeds result in smaller peripheral components and enable new applications like the Rezence A4WP wireless power transfer. The PE29100 is available in a flip-chip package.

Technical Resources

You can view technical documents about Power Semiconductor.
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*The information in the datasheets may be modified without notice or may become unavailable.

Datasheet: This provides the features, specifications, and measurement directions.

Evaluation Kit (EVK) User’s Manual: This provides how to use the evaluation board.

Specifications

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Key Features

      High- and low-side FET drivers
      Dead-time control
      Fast propagation delay, 8 ns
      Tri-state enable mode
      Sub-nanosecond rise and fall time
      2A/4A peak source, sink current

Products displayed on this site are protected under one or more of the following U.S. Patents.

Markets

Power Management

Power Management

RF Mixers & Limiters

Front End Modules

RF Tx/Rx Modules

RF Phase & Amplitude Control

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