New SPDT switch delivers ultra-linear, ultra-fast settling time at DC – 7.5GHz
San Diego, California, June 17, 2008 — Peregrine Semiconductor Corporation, a supplier of the industry’s most advanced RF-CMOS and mixed-signal communications ICs, today announced the new PE42552 SPDT 50-Ohm RF Switch, designed for use in Test and Measurement (T&M) applications requiring ultra-linear RF performance and ultra-fast settling time, such as Automated Test Equipment (ATE), RF/IF transceiver signal switching, filter bank switching and discrete DSA stages. Integrated CMOS control logic, driven by a single-pin, low-voltage CMOS control input, features a novel user-defined logic table. Further, the device includes a logic-select pin which inverts logic polarity for back-to-back switching applications, changing the logic definition of the control pin. The PE42552, designed on Peregrine’s HaRP™-enhanced UltraCMOS silicon-on-sapphire process technology, maintains excellent broadband RF performance from 9 kHz up to 7.5 GHz without gate lag and phase drift, and ensures fast switch-settling time. This innovative feature of the UltraCMOS process provides best-in-class linearity and superior performance to GaAs with the economy an integration of conventional CMOS.
“The PE42552 delivers the industry’s fastest settling time and the highest linearity performance available in a RF broadband solid state switch,” stated Mark Schrepferman, product marketing director for commercial and industrial products. “These attributes make the PE42552 a tremendous tool for extreme performance environments such as the test equipment market,” he added.
The PE42552 exhibits outstanding isolation of 47 dB (3.0 GHz) and approaching 30 dB at 7.5 GHz; high ESD tolerance of 1.0 kV HBM on all ports; and IIP3 of +65 dBm. The device, offered in the RoHS-compliant 16-lead 3x3x0.75mm QFN package, is available for sampling in July 2008 and is priced in volume at $3.34 (100Ku).
About UltraCMOS™ Technology and the HaRP™ Technology Invention
UltraCMOS™ mixed-signal process technology is a proprietary, patented variation of silicon-on insulator (SOI) technology on a sapphire substrate providing with high yields and competitive costs. It combines the RF, mixed- signal, and digital capabilities of any other CMOS process, yet tolerates the high power required for high- performance wireless applications. The Company’s revolutionary HaRP™ technology enables dramatic improvements in harmonic results, linearity and overall RF performance; specifications required by the 3GPP standards body for GSM/WCDMA applications which are unmatched in the industry. In particular, long-awaited accomplishments in Intermodulation Distortion (IMD) handling are now available monolithically to multi-band front-end module and handset manufacturers. These significant performance advantages exist over competing processes such as GaAs, SiGe, BiCMOS and bulk silicon CMOS in applications where RF performance, low power and integration are paramount.
About Peregrine Semiconductor
Peregrine Semiconductor Corporation designs, manufactures, and markets high-performance communications ICs for the wireless infrastructure and mobile wireless; broadband communications; space, defense and avionics markets. Manufactured on the Company’s proprietary UltraCMOS™ silicon-on-sapphire (SOS) process technology, Peregrine products are uniquely poised to meet the needs of the global RF design community in high-growth applications such as WCDMA and GSM digital cellular, broadband, DTV, DVR and rad-hard space and defense programs. Peregrine, headquartered in San Diego, California, maintains global manufacturing and technical sales support worldwide. Additional information is available on the web at psemi.com.
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