50 Watt devices ideal for mobile radio applications
San Diego, California, and Munich, Germany, November 10, 2008 — Peregrine Semiconductor Corporation, a leading supplier of high-performance RF CMOS and mixed-signal communications ICs, today announced its new line of high-power RF switches for the mobile radio market. Featuring a 50 Watt 1dB compression point, the PE42510A single-pole double-throw (SPDT) and PE42650A single-pole triple-throw (SP3T) UltraCMOS RFICs deliver unprecedented linearity with ultra low insertion loss at high power.
“The demands for highly rugged wireless applications are increasing every day,” state Mark Schrepferman, marketing director for Peregrine’s communications and industrial RFIC product line. “The ability of these new Peregrine devices to handle ultra-high power levels and still deliver exceptional RF performance is unprecedented in the industry. Until now, these specs could not be achieved with a single solid state broadband switch and could only be met with much higher priced solutions achieved through re-banding narrow band solutions requiring significant board space. Now, designers do not have to trade off insertion loss or linearity for high power handling,” he added.
Additional features of the new high-power switches include a 10 Watt <8:1 VSWR (Normal Operation); 38 dB TX- RX Isolation; 0.3 dB TX Insertion Loss (typ); 2fo and 3fo < -81 dBc @10 Watts; and an exceptional ESD of 2.0 kV HBM. The PE42650A operates near DC (30 MHz) to 1 GHz, while the PE42510A operates up to 2 GHz. As with all UltraCMOS devices, no blocking capacitors are required.
The new devices are packaged in the 32-lead 5×5 mm QFN package, and will be available for sampling in December 2008 by contacting Peregrine directly. Pricing for the PE42510A is $11.85 (10K units) and for the PE42650A is $14.48 (10K units).
About UltraCMOS™ Technology
UltraCMOS™ mixed-signal process technology is a proprietary, patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate providing with high yields and competitive costs. It combines the RF, mixed- signal, and digital capabilities of any other CMOS process, yet tolerates the high power required for high- performance wireless applications. The Company’s revolutionary HaRP™ and DuNE™ design innovations enable dramatic improvements in harmonic results, linearity and overall RF performance; attributes which enable UltraCMOS RFICs to exceed the specifications required by the most demanding wireless applications which are unmatched in the industry. These significant performance advantages exist over competing processes such as GaAs, SiGe, BiCMOS and bulk silicon CMOS in applications where RF performance, low power and integration are paramount.
About Peregrine Semiconductor
Peregrine Semiconductor Corporation designs, manufactures, and markets high-performance communications RF ICs for the wireless infrastructure and mobile wireless; broadband CATV/DTV; communications infrastructure; and space and avionics markets. Manufactured on the Company’s proprietary UltraCMOS™ mixed-signal process technology, Peregrine products are uniquely poised to meet the needs of a global RF design community in high- growth applications such as WCDMA, EDGE and GSM digital cellular, broadband, DTV, DVR and space and defense programs. The Company, headquartered in San Diego, California, maintains global sales support and manufacturing operations and a worldwide technical distribution network. Additional information is available on the web at psemi.com.
###
The Peregrine Semiconductor name and logo are registered trademarks and UltraCMOS, HaRP and DuNE are trademarks of Peregrine Semiconductor Corporation. All other trademarks are the property of their respective owners.