First CMOS PA to Deliver GaAs-Level Performance for LTE Devices Is an Integral Part of the UltraCMOS Global 1 System, the Industry’s First Reconfigurable RF Front End
BARCELONA – MOBILE WORLD CONGRESS – Feb. 24, 2014 – Peregrine Semiconductor Corp. (NASDAQ: PSMI), founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, hosts the first public demonstrations of the UltraCMOS Global 1 power amplifier (PA) at Mobile World Congress 2014 in Hall 2, Meeting Room 2A20MR. The UltraCMOS Global 1 PA is the industry’s first LTE CMOS PA to deliver the performance level of gallium arsenide (GaAs) PAs, and it offers the unique benefit of being integrated onto a single chip with Peregrine’s Global 1 system, the first reconfigurable RF front end (RFFE). Only with an integrated, reconfigurable RFFE can 4G LTE platform providers and OEMs create a single-SKU handset design for global markets.
ABOUT PEREGRINE SEMICONDUCTOR
Peregrine Semiconductor (NASDAQ: PSMI), founder of RF SOI (silicon on insulator), is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding team have been perfecting UltraCMOS® technology – a patented, advanced form of SOI – to deliver the performance edge needed to solve the RF market’s biggest challenges, such as linearity. With products that deliver best-in-class performance and monolithic integration, Peregrine is the trusted choice for market leaders in automotive, broadband, industrial, Internet of Things, military, mobile devices, smartphones, space, test- and-measurement equipment and wireless infrastructure. Peregrine holds more than 170 filed and pending patents and has shipped more than 2 billion UltraCMOS units. For more information, visit https://psemi.bonfirela.com.
###
The Peregrine Semiconductor name, logo, and UltraCMOS are registered trademarks of Peregrine Semiconductor Corporation in the U.S.A., and other countries. All other trademarks mentioned herein are the property of their respective owners.