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PE42528

UltraCMOS+™ SPDT RF Switch- PE42528

      Ultra wide frequency: 9 kHz–30 GHz
      Low insertion loss:
      ▪ 1.3 dB @ 10 GHz
      ▪ 1.6 dB @ 30 GHz
      IP3: 47 dBm
      Power handling: 34 dBm peak
      High return loss: >18 dB across the band
      Fast switching time: 8 ns
      Package: 20-lead 3×3 mm LGA
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PE42448

UltraCMOS+™ SP4T RF Switch – PE42448

      Low insertion loss:
      ▪ 0.42 dB at 2.6 GHz typical
      ▪ 0.6 dB at 3.8 GHz typical
      High linearity IIP3: 88.5 dBm
      High power handling: 39.5 dBm RMS, 11 dBm PAR
      +115 °C operating temperature
      Packaging: 20-lead 4 x 4 mm LGA
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PE42020

UltraCMOS® True DC RF Switch

      High power handling
      Maximum voltage (DC or AC peak): ±10V on the RF ports
      Total harmonic distortion (THD): –84 dBc
      Configurable 50Ω absorptive or open reflective switch via a single pin (LZ)
      Packaging: 20-lead 4 × 4 mm QFN
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PE42420

UltraCMOS® SPDT RF Switch

      HaRP™ technology-enhanced
      High linearity
      High isolation
      Supports +1.8V control logic
      +105 °C operating temperature
      High ESD tolerance
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PE42423

UltraCMOS® SPDT RF Switch

      802.11 a/b/g/n/ac support
      Wide supply range of 2.3V to 5.5V
      +1.8V control logic compatible
      Exceptional isolation
      High linearity across supply range
      High power handling
      Fast switching time of 500 ns
      High ESD tolerance
      Packaging: 16-lead 3 × 3 mm QFN
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PE42424

UltraCMOS® SPDT RF Switch

      802.11 a/b/g/n/ac/ax, Wi-Fi 6E and ultra-wideband
      (UWB) support
      Exceptional isolation
      Fast switching
      High power handling
      High linearity across supply range
      1.8V control logic compatible
      105°C operating temperature
      High ESD tolerance
      Packaging: 6-lead 1.5 × 1.5 mm DFN
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PE4257

UltraCMOS® SPDT RF Switch

      50Ω characteristic impedance
      Integrated 50Ω 0.25 W terminations
      High input IP3 > +55 dBm
      High isolation 64 dB at 1000 MHz
      Low insertion loss: typically 0.75 dB at 1000 MHz and 0.95 dB at 2000 MHz
      LV CMOS two-pin control
      Single +3 V supply operation
      Low current consumption: 8 µA
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PE42422

UltraCMOS® SPDT RF Switch

      Symmetric SPDT reflective switch
      Low insertion loss
      Wide supply range of 2.3–5.5 V
      Excellent linearity
      High ESD tolerance
      Logic Select (LS) pin provides maximum flexibility of control logic
      Packaging: 12-lead 2 × 2 mm QFN
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PE42426

UltraCMOS® SPDT RF Switch

      Best-in-class linearity across frequency band
      Exceptional harmonics
      Low insertion loss and high isolation performance
      High ESD performance of 3 kV HBM
      Packaging: 12-lead 3 × 3 × 0.75 mm QFN
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PE42427

UltraCMOS® SPDT RF Switch

      Symmetric SPDT reflective switch
      Low insertion loss
      Low spurious performance of -163 dBm/Hz
      Wide supply range of 2.3-5.5V
      Excellent linearity
      High ESD tolerance
      Logic Select (LS) pin provides maximum flexibility of control logic
      Packaging: 12-lead 2 × 2 mm QFN
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PE42722

UltraCMOS® SPDT RF Switch

      Supports DOCSIS 3.0/1 requirements
      Exceptional harmonics performance
      Best in class linearity across frequency band
      Low insertion loss and high isolation performance
      High ESD performance of 1.5 kV HBM
      Packaging – 32-lead 5 × 5 mm QFN
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PE42721

UltraCMOS® SPDT RF Switch

      HaRP™ technology enhanced
      Supports +1.8V control logic
      Low insertion loss
      High isolation
      ESD performance
      Packaging: 12-lead 3 × 3 mm QFN

Markets

  • Best-in-class RF performance
  • Optimal form factors with high levels of integration
  • Proven track record in top-tier smartphones
  • Active member of 3GPP and other industry affiliations
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Power Management

  • 5G antenna-integrated module (AiM) co-designed with Murata
  • High-efficiency 26 GHz, 28 GHz and 39 GHz beamforming front ends supporting bands n257, n258, n261 and n260
  • Advanced, highly integrated package and antenna technology
  • Modular AiM approach for building scalable antenna arrays
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Markets

  • Best-in-class RF performance
  • Optimal form factors with high levels of integration
  • Proven track record in top-tier smartphones
  • Active member of 3GPP and other industry affiliations

  • High Linearity RF Switches

    Industry-leading linearity and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

  • High Isolation RF Switches

    Industry-leading isolation and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

  • Low Insertion Loss RF Switches

    Industry-leading insertion loss and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

  • Antenna Tuning Switches

    Industry-leading RF power handling and ruggedness
    Best-in-class harmonic and linearity
    Small form factor with robust ESD and reliability

  • 75Ω Wired Broadband Switches

    Unmatched linearity performance for DOCSIS 3.1
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD ratings and reliability

  • Broadband RF Switches

    Wideband support with a frequency range from 0 Hz to 67 GHz
    Industry-leading insertion loss, isolation, linearity and settling time
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Best-in-class ESD and reliability

  • High Power Switches

    Industry-leading power handling and RF performance
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

  • Automotive Switches

    AEC-Q100 Grade 2-certified supporting temperatures up to +105°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

  • Extended Temperature RF Switches

    Wide temperature range support from -55°C to +125°C
    HaRP™ technology enhancement reduces gate lag and insertion loss drift
    Monolithic CMOS solution that integrates RF, analog and digital
    Best-in-class ESD and reliability

  • 75Ω Wired Broadband RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability

  • Glitchless RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability

  • General-purpose RF Digital Step Attenuators

    High linearity, fast switching time with wide bandwidth
    Best-in-class attenuation error with fine attenuation steps
    Monolithic CMOS solution that integrates RF, analog and digital
    Excellent ESD protection and reliability

  • 2.4 GHz IoT FEMs

    Industry-leading monolithic Wi-Fi RF front-end solutions
    High linearity performance for Wi-Fi 6 and W-Fi 6E
    Compact form factors integrating high-performance RF, analog and digital
    Best-in-class ESD and reliability

  • Phase Shifters

    Ideal solutions for optimizing transmission phase angle
    Low root-mean-square (RMS) phase and amplitude error with fine phase resolution
    Digital control interface with parallel and serial programming options
    Best-in-class ESD and reliability

  • Monolithic Phase & Amplitude Controllers (MPACs)

    Reliable phase and amplitude control for next-generation communications
    Monolithic CMOS solution that integrates RF, analog and digital
    Integrated solution for Doherty power amplifier optimization (MPAC–Doherty)

  • Digital Tunable Capacitors (DTCs)

    Small form factor with high Q
    Monolithically integrated impedance tuning solution
    Wide-band tuning coverage, minimum mismatch losses, high linearity and fast switching speed
    Best-in-class ESD and reliability

  • Power Limiters

    Highly integrated solutions, smaller and more reliable than PIN-diode solutions
    Adjustable threshold control for maximum design flexibility
    High power handling and linearity required for wide-dynamic-range designs
    Fast response and recovery times for instantaneous protection and rapid return

  • Prescalers

    Exceptional performance with high-frequency support up to 13.5 GHz
    Low phase noise performance and low power consumption solutions
    Bare-die solutions for a wide variety of compact high-performance applications
    Best-in-class ESD and reliability

  • Mixers

    Broadband quad MOSFET array cores for high performance
    Industry-leading linearity, isolation and low conversion loss
    Available in MSOP, DFN and QFN packages
    Best-in-class ESD and reliability

  • Switch LNA

    Integrates dual-channel LNA with bypass function & high-power switch
    20W average RF input power
    Low noise figure of 0.9 dB
    +105°C operating temperature

Power Management

  • Unique, patented architecture to enable higher overall system, power conversion efficiency
  • Fully integrated solutions from 15W to 160W
  • Virtually lossless (up to 99% peak) conversion and soft-switching topology
  • Parallel operation to higher power levels
  • Available through our parent company Murata
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Integrated products

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RF Mixers & Limiters

  • Exceptional performance with high-frequency support
  • Highly integrated, reliable solutions in a small form factor
  • Variety of packaging options for maximum design flexibility
  • Best-in-class ESD and reliability
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Front End Modules

  • Industry-leading monolithic Wi-Fi RF front-end solutions
  • High linearity performance for Wi-Fi 6 and W-Fi 6E
  • Compact form factors integrating high-performance RF, analog and digital
  • Best-in-class ESD and reliability
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RF Phase & Amplitude Control

  • Reliable phase and amplitude control for next-generation communications
  • Monolithic CMOS solution that integrates RF, analog and digital
  • Digital control interface with parallel and serial programming options
  • Best-in-class ESD and reliability
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RF Attenuators

  • High linearity, fast switching time with wide bandwidth
  • Best-in-class attenuation error with fine attenuation steps
  • Monolithic CMOS solution that integrates RF, analog and digital
  • Excellent ESD protection and reliability
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RF Switches

  • Industry-leading RF performance
  • HaRP™ technology enhancement
  • Monolithic CMOS solution that integrates RF, analog and digital
  • Best-in-class ESD and reliability
View Products
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