Peregrine Semiconductor Unveils the World’s Fastest GaN FET Driver
Peregrine’s UltraCMOS® Technology Enables GaN Transistors to Achieve Their Performance and Speed Potential SAN DIEGO – July 12, 2016 – Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, introduces the word’s fastest gallium nitride (GaN) field-effect transistor (FET) driver, the UltraCMOS® PE29100. Built on Peregrine’s UltraCMOS technology, […]
PE29100 GaN FET Driver
The UltraCMOS® PE29100 is the the word’s fastest gallium nitride (GaN) field-effect transistor (FET) driver. Designed to drive the gates of a high-side and a low-side GaN FET in a switching configuration, the PE29100 delivers the industry’s fastest switching speeds, shortest propagation delays and lowest rise and fall times to AC-DC converters, DC-DC converters, class D […]