Peregrine Semiconductor Introduces Rad-hard Digital Step Attenuator

PE94302 6-bit DSA offers RF integration for space applications

San Diego, California, June 20, 2005 Peregrine Semiconductor Corporation, a supplier of the industry’s most advanced RF CMOS and mixed-signal communications ICs, today announced the PE94302, the first Digital Step Attenuator (DSA) for rad-hard space applications.

The 6-bit, 50Ω PE94302, which operates DC 4.0GHz, features attenuation of 31.5dB; parallel and serial programming modes; low insertion loss of 1.7 dB; IIP3 of 52 dBm; and a switching speed of 2 µs. UltraCMOS-based products from Peregrine further offer immunity to Single Event Latchup (SEL); Single-event Upset (SEU) of less than 10E-9 errors/bit-day; and tolerance total dose radiation of 100 Krads (Si).

“UltraCMOS™ technology consistently delivers extraordinary performance due to its patented silicon-on-sapphire substrate. Rad-hard tolerance levels are met with confidence, and for space applications, the PE94302 is yet another example of how UltraCMOS supports not only the performance-value requirements of standard commercial products, but also service extreme environmental demands of space,” stated Chuck Tabbert, director of space and defense products for Peregrine.

Evaluation Kits support development with the PE94302, and UltraCMOS technology tutorials are available from Peregrine on its website at www.psemi.com. The PE94302 is offered in the 28-pin Quad Flat Pack (QFP) specifically developed for RF applications, and is in production now. Pricing is available per customer specifications by contacting Peregrine at  sales@psemi.com.

About Peregrine Semiconductor and UltraCMOS™ Technology

Peregrine Semiconductor Corporation designs, manufactures, and markets high-performance communications ICs for the wireless infrastructure and mobile wireless; broadband communications; space, defense and avionics markets. Manufactured on the Company’s proprietary UltraCMOS™ mixed-signal process technology, Peregrine products are uniquely poised to meet the needs of a global RF design community in high-growth applications such as WCDMA and GSM digital cellular, broadband, DTV, DVR and rad-hard space and defense programs. The UltraCMOS technology is a patented variation of silicon-on-insulator (SOI) technology, and is the first commercially qualified use of Ultra-Thin-Silicon (UTSi®) on sapphire substrates with high yields and competitive costs. Peregrine 0.25µm and 0.5µm UltraCMOS devices are manufactured in its 6” CMOS facility located in Sydney, Australia and in Hachioji, Japan through an alliance with OKI Electric Industry Co., Ltd. The Company, headquartered in San Diego, California, maintains global sales support operations and a worldwide technical distribution network. Additional information is available on the web at psemi.com.

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The Peregrine Semiconductor name, logo and UTSi are registered trademarks and UltraCMOS is a trademark of Peregrine Semiconductor Corporation. All other trademarks are the property of their respective owners.

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